The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Oct. 25, 2021
Sandisk Technologies Llc, Addison, TX (US);
Fumitaka Amano, Yokkaichi, JP;
Kensuke Ishikawa, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A method includes forming a semiconductor device, forming a combination of a connection-level dielectric layer and a connection-level metal interconnect structure over the semiconductor device, forming a line-and-via-level dielectric layer over the connection-level dielectric layer, forming an integrated line-and-via cavity through the line-and-via-level dielectric layer over the connection-level metal interconnect structure, selectively growing a conductive via structure consisting essentially of an elemental metal that is not copper from a physically exposed conductive surface located at a bottom of the via portion of the integrated line-and-via cavity without filling a line portion of the integrated line-and-via cavity, and forming a copper-based conductive line structure that includes copper at an atomic percentage that is greater than 90% in the line portion of the integrated line-and-via cavity.