The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Oct. 27, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Yuji Totoki, Yokkaichi, JP;

Fumitaka Amano, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 23/522 (2006.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 21/768 (2006.01); H01L 27/11565 (2017.01); H01L 21/3205 (2006.01); H01L 27/11573 (2017.01); H01L 27/11531 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 21/32055 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 27/11531 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01);
Abstract

A semiconductor structure includes a first alternating stack of first insulating layers and first electrically conductive layers having first stepped surfaces and located over a substrate, a second alternating stack of second insulating layers and second electrically conductive layers having second stepped surfaces, and memory opening fill structures extending through the alternating stacks. A contact via assembly is provided, which includes a first conductive via structure vertically extending from a top surface of one of the first electrically conductive layers through a subset of layers within the second alternating stack and through the second retro-stepped dielectric material portion, an insulating spacer located within an opening through the subset of layers, and a second conductive via structure laterally surrounding the insulating spacer and contacting a second electrically conductive layer.


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