Company Filing History:

30 out of 52,735

Kabushiki Kaisha Toshiba

patents

2 out of 2,916

Tokyo Shibaura Denki Kabushiki Kaisha

patents

1 out of 11

Kabushiki Kasiha Toshiba

patents

Years Active: 1985-2006

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33 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7075820 - Semiconductor memory device for dynamically storing data with channel body of transistor used as storage node (2006-07-11),

2. 7042753 - Multi-value magnetic random access memory with stacked tunnel magnetoresistance (TMR) elements (2006-05-09),

3. 7042040 - Semiconductor device and method for manufacturing the same (2006-05-09),

4. 6891225 - Dynamic semiconductor memory device (2005-05-10),

5. 6548848 - Semiconductor memory device (2003-04-15),

6. 6292390 - Semiconductor device (2001-09-18),

7. 6232822 - Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism (2001-05-15),

8. 5895946 - MOS random access memory having array of trench type (1999-04-20),

9. 5731609 - MOS random access memory having array of trench type (1998-03-24),

10. 5561311 - Semiconductor memory with insulation film embedded in groove formed on (1996-10-01),

11. 5488242 - Semiconductor memory device (1996-01-30),

12. 5477071 - MOS random access memory having array of trench type (1995-12-19),

13. 5387532 - Semiconductor memory having capacitor electrode formed above bit line (1995-02-07),

14. 5371024 - Semiconductor device and process for manufacturing the same (1994-12-06),

15. 5363325 - Dynamic semiconductor memory device having high integration density (1994-11-08),

Title: Unveiling the Innovations of Fumio Horiguchi

Introduction:

Fumio Horiguchi is a distinguished inventor based in Tokyo, Japan, renowned for his remarkable contributions to the field of semiconductor memory devices.

Latest Patents:

Horiguchi's recent patents showcase his expertise in the development of cutting-edge technologies such as a semiconductor memory device for dynamically storing data with the channel body of a transistor used as a storage node and a semiconductor device and method for manufacturing the same.

Career Highlights:

With an impressive portfolio of 33 patents, Horiguchi has made significant strides in revolutionizing semiconductor technology. His work reflects a deep understanding of MIS transistors and innovative memory cell configurations.

Collaborations:

Throughout his career, Horiguchi has collaborated with esteemed professionals in the industry, including Akihiro Nitayama and Katsuhiko Hieda. His collaborative efforts have led to groundbreaking advancements in semiconductor memory design.

Conclusion:

Fumio Horiguchi's ingenuity and dedication to innovation have solidified his position as a trailblazer in the field of semiconductor technology. His patents continue to shape the future of memory storage devices, leaving a lasting impact on the industry.

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