The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1994
Filed:
Jul. 01, 1992
Applicant:
Inventors:
Kazumasa Sunouchi, Yokohama, JP;
Tsuneaki Fuse, Tokyo, JP;
Akihiro Nitayama, Kawasaki, JP;
Takehiro Hasegawa, Tokyo, JP;
Shigeyoshi Watanabe, Yokohama, JP;
Fumio Horiguchi, Tokyo, JP;
Katsuhiko Hieda, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11L / ;
U.S. Cl.
CPC ...
365149 ; 365177 ; 257273 ; 257360 ; 257363 ; 257370 ;
Abstract
A bipolar transistor Q.sub.1 having a collector formed of a substrate region SUB of a MOS transistor M.sub.1, a base formed of the drain region of the MOS transistor and an emitter formed on the base and connected to a bit line BL is connected between the bit line BL and a memory cell MC formed of the MOS transistor M.sub.1 and and a capacitor C.sub.1 and the current amplifying operation of a bipolar transistor is used for data readout.