The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 1996
Filed:
Nov. 24, 1993
Kazumasa Sunouchi, Yokohama, JP;
Hiroshi Takato, Kawasaki, JP;
Tohru Ozaki, Tokyo, JP;
Naoko Okabe, Tokyo, JP;
Katsuhiko Hieda, Yokohama, JP;
Fumio Horiguchi, Tokyo, JP;
Akihiro Nitayama, Kawasaki, JP;
Takashi Yamada, Kawasaki, JP;
Kouji Hasimoto, Yokohama, JP;
Satosi Inoue, Suwa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a DRAM having a structure in which a storage node electrode is formed via an insulator film in a trench formed in a memory cell region to thereby form a capacitor, and in which the storage node electrode is connected in the source/drain regions of a MOSFET through a storage node contact formed in a part of the insulator film, the trench is disposed so as to deviate widthwise in a channel region of the MOSFET, so that the distance between adjacent element regions is reduced without causing misalignment of masks used in the formation of the storage node contact, thereby to provide a miniaturized high-reliability DRAM. In addition, the storage node contact and the trench can be formed in large size.