Yokohama, Japan

Naoko Okabe


Average Co-Inventor Count = 6.9

ph-index = 3

Forward Citations = 59(Granted Patents)


Location History:

  • Yokohama, JP (1992 - 1993)
  • Tokyo, JP (1996)

Company Filing History:


Years Active: 1992-1996

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3 patents (USPTO):

Title: Naoko Okabe: Innovator in Semiconductor Memory Technology

Introduction

Naoko Okabe is a prominent inventor based in Yokohama, Japan. She has made significant contributions to the field of semiconductor memory devices, holding three patents that showcase her innovative approach to technology. Her work focuses on enhancing the reliability and miniaturization of DRAM devices.

Latest Patents

One of her latest patents is for a semiconductor memory device that features a unique structure in which a storage node electrode is formed via an insulator film in a trench within a memory cell region. This design allows for the formation of a capacitor while ensuring that the storage node electrode connects to the source/drain regions of a MOSFET through a storage node contact. The trench is strategically placed to minimize the distance between adjacent element regions without causing misalignment during the mask formation process. This innovation leads to a miniaturized, high-reliability DRAM.

Another notable patent describes a method of fabricating a semiconductor memory device. This method includes a first contact hole made in a first inter-layer insulating film over a gate electrode and a second contact hole in a second inter-layer insulating film. The design allows for a smaller memory device while improving reliability. The capacitor is formed in a layer above the bit line, facilitating the processing of the storage node electrode and enhancing the capacitor area.

Career Highlights

Naoko Okabe works at Kabushiki Kaisha Toshiba, a leading company in the technology sector. Her innovative work has positioned her as a key figure in the development of advanced semiconductor technologies.

Collaborations

She collaborates with notable coworkers, including Kazumasa Sunouchi and Takashi Yamada, who contribute to her research and development efforts.

Conclusion

Naoko Okabe's contributions to semiconductor memory technology exemplify her innovative spirit and dedication to advancing the field. Her patents reflect a commitment to improving device reliability and miniaturization, making her a significant figure in the industry.

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