Company Filing History:
Years Active: 1996
Title: Kouji Hasimoto: Innovator in Semiconductor Memory Technology
Introduction
Kouji Hasimoto is a prominent inventor based in Yokohama, Japan. He is known for his significant contributions to the field of semiconductor memory devices. His innovative work has led to advancements in dynamic random-access memory (DRAM) technology.
Latest Patents
Kouji Hasimoto holds a patent for a semiconductor memory device. This invention involves a DRAM structure where a storage node electrode is formed via an insulator film in a trench within the memory cell region. The design allows for the formation of a capacitor, connecting the storage node electrode to the source/drain regions of a MOSFET through a storage node contact. The trench is strategically positioned to minimize the distance between adjacent element regions without causing misalignment of the masks used in the formation of the storage node contact. This innovation results in a miniaturized, high-reliability DRAM, with the capability to form large-sized storage node contacts and trenches.
Career Highlights
Kouji Hasimoto is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has been instrumental in pushing the boundaries of semiconductor technology. He has made significant strides in enhancing the performance and reliability of memory devices.
Collaborations
Kouji Hasimoto has collaborated with notable colleagues, including Kazumasa Sunouchi and Hiroshi Takato. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the field of semiconductor technology.
Conclusion
Kouji Hasimoto's contributions to semiconductor memory technology exemplify the spirit of innovation. His patent for a miniaturized high-reliability DRAM showcases his expertise and commitment to advancing technology. His work continues to influence the future of memory devices, making a lasting impact in the industry.