The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Dec. 03, 2001
Fumio Horiguchi, Tokyo-To, JP;
Takashi Ohsawa, Yokohama, JP;
Yoshihisa Iwata, Yokohama, JP;
Takashi Yamada, Ebina, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Each of MIS transistors of a semiconductor memory device has a semiconductor layer ( ); a source region ( ) formed in the semiconductor layer; a drain region ( ) formed apart from the source region in the semiconductor layer, the semiconductor layer between the source region and the drain region serving as a channel body in a floating state; a first gate ( ) which forms a channel in the channel body; a second gate ( ) formed so as to control a potential of the channel body by a capacitive coupling; and a high concentration region ( ) formed in the channel body on the second gate side, impurity concentration of the high concentration region being higher than that of the channel body.