Hsinchu, Taiwan

Fuchia Shone

This inventor holds 26 USPTO granted patents, primarily in Flash Memory Technology. Top assignees: Macronix International Co., Ltd., Macronix Internatioal, Ltd., Other. Active years: 1995-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fuchia Shone. Retrieved from https://idiyas.com/inventor/fuchia-shone

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 14

Forward Citations = 905(Granted Patents)


Location History:

  • Hsinchu, CN (2000)
  • Hsinchu, TW (1995 - 2002)

Company Filing History:


Years Active: 1995-2002

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Areas of Expertise:
Integrated Circuit Memory
Flash EPROM Programming
Memory Redundancy Circuit
Multi-Level Memory Array
Fowler-Nordheim Tunneling
Non-Volatile Memory Cell
Soft Programming Algorithm
Interpoly Dielectric Process
Floating Gate Transistor
Conductive Sidewall Spacer
Peripheral Region Protection
Dual Mode Memory
26 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Fuchia Shone in the Field of Integrated Circuit Technology

Introduction

Fuchia Shone, based in Hsinchu, Taiwan, is a distinguished inventor known for his remarkable contributions to the field of integrated circuit technology. With an impressive portfolio of 26 patents, Shone has consistently pushed the boundaries of innovation, particularly in enhancing the performance and endurance of memory systems.

Latest Patents

Fuchia Shone's latest innovations include groundbreaking patents that address critical challenges in memory technology. One of his significant inventions is a technique for increasing the endurance of integrated circuit memory. This method focuses on organizing an array of memory cells into multiple sectors and strategically assigning addresses for data storage. By maintaining a record of the current sector and managing the access to those addresses, Shone's technique allows for improved durability of memory cells, even surpassing their specified endurance through effective sector management.

Another key patent developed by Shone pertains to the fast flash EEPROM programming and pre-programming circuit design. This invention revolutionizes the programming process of floating gate storage transistors, such as FLASH EPROMS, by implementing a controllable voltage source. This circuit accelerates pre-programming tasks by varying gate programming potentials, facilitating quicker charge movement and enhancing overall programming speed, thereby achieving a high final turn-on threshold voltage for the programmed transistors.

Career Highlights

Throughout his career, Fuchia Shone has worked with notable companies in the technology sector, including Macronix International Co., Ltd. His contributions have significantly influenced the design and functionality of integrated circuits, making him a respected figure in the industry. His innovative mindset and technical expertise have led to advancements that benefit memory technologies broadly.

Collaborations

In his journey of innovation, Fuchia Shone has collaborated with prominent professionals like Tom D Yiu and Tien-Ler Lin. These partnerships have fostered the exchange of ideas, leading to the development of cutting-edge technologies that set new standards in the field.

Conclusion

Fuchia Shone's remarkable achievements highlight his unwavering dedication to innovation in integrated circuit technology. His patents, particularly focusing on enhancing the endurance of memory systems and optimizing programming speeds, underscore his crucial role in advancing electronic technology. With ongoing contributions to the field, Shone continues to inspire future generations of inventors and engineers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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