The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1998
Filed:
Mar. 31, 1997
Yun Chang, Hsinchu, TW;
Fuchia Shone, Hsinchu, TW;
Chin-Yi Huang, Hsinchu, TW;
Nai chen Peng, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A process is provided for fabricating a nonvolatile memory cell. According to the process, source and drain regions are formed on a first conductivity-type semiconductor substrate; and insulating layer is formed on the source and drain regions; a floating gate is formed on the insulating layer; a dielectric composite is formed on the floating gate; and a control gate is formed on the dielectric composite. The dielectric composite includes a bottom layer of silicon dioxide formed on the floating gate; a layer of silicon nitride formed on the bottom silicon dioxide layer; and a top layer of silicon dioxide formed on the nitride layer such that the silicon nitride layer of the composite is thinner than the top or the bottom silicon dioxide layer.