The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1998
Filed:
Aug. 25, 1995
Applicant:
Inventors:
Yun Chang, Hsinchu, TW;
Fuchia Shone, Hsinchu, TW;
Chih Mu Huang, Chang-Hua, TW;
Kuo Tung Sung, Taipei, TW;
Assignee:
Macronix International, Co. Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438266 ; 438769 ;
Abstract
A process is provided for fabricating an integrated circuit in which an oxynitride layer is selectively formed in a first active region without forming an oxynitride layer in a second active region peripheral to the first active region. In one embodiment, the memory cell is fabricated where an oxynitride layer is prevented from forming in a region peripheral to the memory array region. In an alternate embodiment, the memory cell is fabricated where an oxynitride layer formed in a region peripheral to the memory array region is selectively removed.