Fengshan, Taiwan

Fu Chin Yang


Average Co-Inventor Count = 5.3

ph-index = 2

Forward Citations = 14(Granted Patents)


Location History:

  • Hsin-Chu, TW (2005)
  • Fongshan, TW (2007)
  • Fengshan, TW (2009 - 2015)

Company Filing History:


Years Active: 2005-2015

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5 patents (USPTO):Explore Patents

Title: Fu Chin Yang: Inspiring the Next Generation with Innovation

Introduction:

Fu Chin Yang, a visionary inventor hailing from Fengshan, Taiwan, has left an indelible mark on the realm of technological advancements through his unwavering passion for innovation. His relentless pursuit of excellence continues to inspire the next wave of inventors.

Latest Patents:

Among his notable contributions are his latest patents, notably the "Method of forming high voltage device" and "High voltage devices and methods of forming the high voltage devices." These patents showcase his expertise in developing cutting-edge technologies that push the boundaries of what is possible in high voltage device manufacturing.

Career Highlights:

Fu Chin Yang's career is distinguished by a total of 5 patents that exemplify his dedication to advancing the field of technology. His work at Taiwan Semiconductor Manufacturing Company Limited has been instrumental in shaping the industry's landscape, solidifying his reputation as a pioneering inventor.

Collaborations:

Throughout his career, Fu Chin Yang has collaborated with esteemed colleagues such as Kuo-Feng Yu and Jian-Hsing Lee. Working alongside these talented individuals has enhanced his ability to innovate and contribute significantly to the development of new technologies.

Conclusion:

In conclusion, Fu Chin Yang's legacy as a pioneering inventor is firmly established in the annals of technological advancement. His passion for innovation and commitment to excellence continue to inspire future generations of inventors, setting a high standard for the industry as a whole.

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