The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Feb. 25, 2005
Kuo-feng Yu, Hsin-Chu, TW;
Jian-hsing Lee, Hsin-Chu, TW;
Jiaw-ren Shih, Hsin-Chu, TW;
Fu Chin Yang, Fongshan, TW;
Kuo-Feng Yu, Hsin-Chu, TW;
Jian-Hsing Lee, Hsin-Chu, TW;
Jiaw-Ren Shih, Hsin-Chu, TW;
Fu Chin Yang, Fongshan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Abstract
A system and method is disclosed for implementing a new bipolar-based silicon controlled rectifier (SCR) circuit for an electrostatic discharge (ESD) protection. The SCR circuit comprises a bipolar device to be formed on a semiconductor substrate. The bipolar device comprises at least an N-well for providing a high resistance and a P+ material to be used as a collector thereof for further providing a high resistance. At least an Nmoat guard ring and a Pmoat guard ring surround the bipolar device, wherein when an ESD event occurs, the high resistance provided by the N-well and the P+ material of the bipolar device increases a turn-on speed.