The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
Mar. 14, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Chang Cheng, Hsinchu, TW;
Ruey-Hsin Liu, Hsin-Chu, TW;
Chih-Wen Yao, Hsinchu, TW;
Chia-Chin Shen, Hsinchu, TW;
Eric Huang, Jhubei, TW;
Fu Chin Yang, Fengshan, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Hsiao-Chin Tuan, Judong County, TW;
Abstract
A method of forming a device includes forming a buried well region of a first dopant type in a substrate. A well region of the first dopant type is formed over the buried well region. A first well region of a second dopant type is formed between the well region of the first dopant type and the buried well region of the first dopant type. A second well region of the second dopant type is formed in the well region of the first dopant type. An isolation structure is formed at least partially in the well region of the first dopant type. A first gate electrode is formed over the isolation structure and the second well region of the second dopant type.