The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Nov. 10, 2004
Kuo-feng Yu, Hsinchu, TW;
Jian-hsing Lee, Hsin-Chu, TW;
Jiaw-ren Shih, Hsinchu, TW;
Fu Chin Yang, Fengshan, TW;
Kuo-Feng Yu, Hsinchu, TW;
Jian-Hsing Lee, Hsin-Chu, TW;
Jiaw-Ren Shih, Hsinchu, TW;
Fu Chin Yang, Fengshan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure for electrostatic discharge protection is presented. The semiconductor structure comprises a grounded gate nMOS (GGNMOS) having a substrate, a gate electrode, a source region and a drain region. A plurality of contact plugs is formed on the source and drain side. A plurality of first level vias is electrically coupled to the GGNMOS and has a substantially asymmetrical layout in the source and drain regions. A second level via(s) re-routes the ESD current to the desired first level vias. The uniformity of the current flow in the GGNMOS is improved.