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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8704312 B1

PDFFull Text
Date of Patent:
Apr. 22, 2014

Filed:

Jan. 05, 2010

High voltage devices and methods of forming the high voltage devices

Applicants:

Chih-chang Cheng, Hsinchu, TW;

Ruey-hsin Liu, Hsin-Chu, TW;

Chih-wen Yao, Hsinchu, TW;

Chia-chin Shen, Hsinchu, TW;

Eric Huang, Jhubei, TW;

Fu Chin Yang, Fengshan, TW;

Chun Lin Tsai, Hsin-Chu, TW;

Hsiao-chin Tuan, Taowan, TW;

Inventors:

Chih-Chang Cheng, Hsinchu, TW;

Ruey-Hsin Liu, Hsin-Chu, TW;

Chih-Wen Yao, Hsinchu, TW;

Chia-Chin Shen, Hsinchu, TW;

Eric Huang, Jhubei, TW;

Fu Chin Yang, Fengshan, TW;

Chun Lin Tsai, Hsin-Chu, TW;

Hsiao-Chin Tuan, Taowan, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., , TW;

Attorney:

Lowe Hauptman & Ham, LLP

Primary Examiner:

Laura Menz

Assistant Examiner:

Candice Y Chan

Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high voltage (HV) device includes a well region of a first dopant type disposed in a substrate. A first well region of a second dopant type is disposed in the well region of the first dopant type. An isolation structure is at least partially disposed in the well region of the first dopant type. A first gate electrode is disposed over the isolation structure and the first well region of the second dopant type. A second well region of the second dopant type is disposed in the well region of the first dopant type. The second well region of the second dopant type is spaced from the first well region of the second dopant type. A second gate electrode is disposed between and over the first well region of the second dopant type and the second well region of the second dopant type.

Find Patent Forward Citations

Cheng, Chih-Chang. (2014). High voltage devices and methods of forming the high voltage devices (U.S. Patent No. 8704312). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8704312

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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