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For the Inventor, By the Inventor

Boise, ID, United States of America

Francois H Fabreguette

USPTO Granted Patents = 13 

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 17(Granted Patents)


Company Filing History:

goldMedal12 out of 37,905 
 
Micron Technology Incorporated
 patents
where one patent can have more than one assignee

Years Active: 2020-2024

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13 patents (USPTO):
1. 12150303 - Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies (2024-11-19),
2. 11715692 - Microelectronic devices including conductive rails, and related methods (2023-08-01),
3. 11672120 - Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies (2023-06-06),
4. 11672118 - Electronic devices comprising adjoining oxide materials and related systems (2023-06-06),
5. 11631697 - Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies (2023-04-18),
6. 11557608 - Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies (2023-01-17),
7. 11289501 - Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies (2022-03-29),
8. 11127830 - Apparatus with multidielectric spacers on conductive regions of stack structures, and related methods (2021-09-21),
9. 11107830 - Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies (2021-08-31),
10. 11037956 - Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies (2021-06-15),
11. 10964536 - Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio (2021-03-30),
12. 10937654 - Methods of doping a silicon-containing material and methods of forming a semiconductor device (2021-03-02),
13. 10777576 - Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies (2020-09-15),

Title: The Innovative Contributions of Francois H Fabreguette

Introduction

Francois H Fabreguette is a prominent inventor based in Boise, ID, known for his significant contributions to the field of microelectronics. With a total of 13 patents to his name, he has made remarkable advancements in integrated assemblies and microelectronic devices. His work has had a profound impact on the technology industry, particularly in memory storage solutions.

Latest Patents

Francois H Fabreguette's latest patents include innovative designs for integrated assemblies that feature charge-trapping materials arranged in vertically spaced segments. These assemblies incorporate a memory array with a vertical stack of alternating insulative and wordline levels. The conductive terminal ends within control gate regions are vertically spaced from one another by first insulative regions. Additionally, his patents describe microelectronic devices that consist of a stack structure with alternating conductive and insulative structures, which enhance the performance of memory cells and electronic systems.

Career Highlights

Fabreguette has built a successful career at Micron Technology Incorporated, where he has played a crucial role in developing cutting-edge technologies. His expertise in microelectronics has led to numerous innovations that have advanced the capabilities of memory devices. His work is characterized by a commitment to improving the efficiency and functionality of electronic systems.

Collaborations

Throughout his career, Francois H Fabreguette has collaborated with notable colleagues, including Richard J Hill and Shyam Surthi. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas, further enhancing the development of new technologies.

Conclusion

Francois H Fabreguette's contributions to the field of microelectronics are significant and impactful. His innovative patents and collaborative efforts continue to shape the future of technology, making him a key figure in the industry.

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