The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Feb. 06, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Francois H. Fabreguette, Boise, ID (US);

Paul A. Paduano, Boise, ID (US);

Gurtej S. Sandhu, Boise, ID (US);

John A. Smythe, III, Boise, ID (US);

Matthew N. Rocklein, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); H01L 21/0259 (2013.01); H01L 21/0262 (2013.01); H01L 27/108 (2013.01);
Abstract

Methods, apparatuses, and systems related to formation of an atomic layer of germanium (Ge) on a substrate material are described. An example method includes introducing, into a semiconductor processing chamber housing a substrate material having a high aspect ratio, a reducing agent, and introducing, into the semiconductor processing chamber, a germanium amidinate precursor. The example method further includes forming an atomic layer of germanium on the substrate material resulting from a reaction of the reducing agent and the germanium amidinate precursor.


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