The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Sep. 04, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Shyam Surthi, Boise, ID (US);

Richard J. Hill, Boise, ID (US);

Gurtej S. Sandhu, Boise, ID (US);

Byeung Chul Kim, Boise, ID (US);

Francois H. Fabreguette, Boise, ID (US);

Chris M. Carlson, Nampa, ID (US);

Michael E. Koltonski, Boise, ID (US);

Shane J. Trapp, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01);
Abstract

An electronic device comprising a cell region comprising stacks of alternating dielectric materials and conductive materials. A pillar region is adjacent to the cell region and comprises storage node segments adjacent to adjoining oxide materials and adjacent to a tunnel region. The storage node segments are separated by a vertical portion of the tunnel region. A high-k dielectric material is adjacent to the conductive materials of the cell region and to the adjoining oxide materials of the pillar region. Additional electronic devices are disclosed, as are methods of forming an electronic device and related systems.


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