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For the Inventor, By the Inventor

Boise, ID, United States of America

Byeung Chul Kim

USPTO Granted Patents = 19 

Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 25(Granted Patents)


Company Filing History:

goldMedal17 out of 37,905 
 
Micron Technology Incorporated
 patents
where one patent can have more than one assignee

Years Active: 2020-2025

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19 patents (USPTO):
1. 12477730 - Electronic devices comprising segmented high-k dielectric materials and storage node materials, related systems, and methods of forming (2025-11-18),
2. 12156406 - Methods of forming integrated assemblies with improved charge migration impedance (2024-11-26),
3. 12150303 - Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies (2024-11-19),
4. 12082416 - Integrated assemblies and methods of forming integrated assemblies (2024-09-03),
5. 12052862 - Microelectronic devices including stack structures having air gaps, and related memory devices, electronic systems, and methods (2024-07-30),
6. 11672118 - Electronic devices comprising adjoining oxide materials and related systems (2023-06-06),
7. 11631697 - Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies (2023-04-18),
8. 11587948 - Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies (2023-02-21),
9. 11557608 - Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies (2023-01-17),
10. 11289501 - Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies (2022-03-29),
11. 11171153 - Integrated assemblies having improved charge migration (2021-11-09),
12. 11107830 - Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies (2021-08-31),
13. 11081497 - Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies (2021-08-03),
14. 11037956 - Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies (2021-06-15),
15. 10943907 - Integrated circuitry comprising an array, method of forming an array, method of forming DRAM circuitry, and method used in the fabrication of integrated circuitry (2021-03-09),

Title: The Innovative Journey of Byeung Chul Kim

Introduction: Byeung Chul Kim, a pioneering inventor based in Boise, ID (US), has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Byeung Chul Kim holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: Throughout his illustrious career, Byeung Chul Kim has been recognized for his inventive prowess, receiving numerous awards for his groundbreaking technologies that have revolutionized various industries.

Collaborations: Byeung Chul Kim has collaborated with leading research institutions, universities, and tech companies to further develop and implement his innovative ideas, solidifying his reputation as a visionary inventor.

Conclusion: Byeung Chul Kim's relentless pursuit of innovation and his passion for creating solutions to complex challenges have established him as a trailblazing inventor whose impact will be felt for years to come.

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