Byeung Chul Kim

This inventor holds 23 USPTO granted patents and 10 published patent applications. Top assignee: Micron Technology Incorporated. Active years: 2020-2026.

USPTO Granted Patents = 23 (Patent Applications = 10)

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 3

Forward Citations = 27(Granted Patents)

Company Filing History:

21 out of 39,125

Micron Technology Incorporated

patents

where one patent can have more than one assignee

Years Active: 2020-2026

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23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12575102 - Merged cavities and buried etch stops for three-dimensional memory arrays (2026-03-10),

2. 12568621 - Memory apparatus and methods including merged process for memory cell pillar and source structure (2026-03-03),

3. 12557289 - Electronic devices comprising adjoining oxide materials and related systems (2026-02-17),

4. 12543543 - Selective cavity merging for isolation regions in a memory die (2026-02-03),

5. 12477730 - Electronic devices comprising segmented high-k dielectric materials and storage node materials, related systems, and methods of forming (2025-11-18),

6. 12156406 - Methods of forming integrated assemblies with improved charge migration impedance (2024-11-26),

7. 12150303 - Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies (2024-11-19),

8. 12082416 - Integrated assemblies and methods of forming integrated assemblies (2024-09-03),

9. 12052862 - Microelectronic devices including stack structures having air gaps, and related memory devices, electronic systems, and methods (2024-07-30),

10. 11672118 - Electronic devices comprising adjoining oxide materials and related systems (2023-06-06),

11. 11631697 - Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies (2023-04-18),

12. 11587948 - Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies (2023-02-21),

13. 11557608 - Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies (2023-01-17),

14. 11289501 - Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies (2022-03-29),

15. 11171153 - Integrated assemblies having improved charge migration (2021-11-09),

Title: The Innovative Journey of Byeung Chul Kim

Introduction: Byeung Chul Kim, a pioneering inventor based in Boise, ID (US), has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Byeung Chul Kim holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: Throughout his illustrious career, Byeung Chul Kim has been recognized for his inventive prowess, receiving numerous awards for his groundbreaking technologies that have revolutionized various industries.

Collaborations: Byeung Chul Kim has collaborated with leading research institutions, universities, and tech companies to further develop and implement his innovative ideas, solidifying his reputation as a visionary inventor.

Conclusion: Byeung Chul Kim's relentless pursuit of innovation and his passion for creating solutions to complex challenges have established him as a trailblazing inventor whose impact will be felt for years to come.