The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Apr. 22, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Byeung Chul Kim, Boise, ID (US);

Joshua Wolanyk, Boise, ID (US);

Richard J. Hill, Boise, ID (US);

Damir Fazil, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/535 (2006.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/535 (2013.01); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/40 (2023.02);
Abstract

Some embodiments include apparatuses and methods of forming the apparatuses. One of the methods includes forming levels of materials one over another; forming a first opening and a second opening in the levels of materials; forming at least one dielectric material in the first and second openings; forming tiers of materials over the levels of materials and over the dielectric material in the first and second openings; forming a first pillar of a memory cell string, the first pillar extending through the tiers of materials and extending partially into a location of the first opening; and forming a second pillar of a contact structure, the second pillar extending through the tiers of materials and through a location of the second opening.


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