The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Jul. 25, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jean-Sebastien Materne Lehn, Boise, ID (US);

Francois H. Fabreguette, Boise, ID (US);

Timothy A. Quick, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/45527 (2013.01); H10P 14/24 (2026.01); H10P 14/3411 (2026.01);
Abstract

Methods, systems, and devices for methods for depositing germanium films by atomic layer deposition are described. For instance, a device may expose a base material (e.g., multiple stacks of materials) to a first precursor to form a germanium compound on the base material, the first precursor including a germanium amidinate. In some examples, the germanium compound may include germanium and at least one leaving group. The device may react a second precursor with the germanium compound and may form a layer of germanium on the base material based on exposing the base material to the first precursor and reacting the second precursor with the germanium compound. In some examples, the device may remove the at least one leaving group from the germanium compound based on reacting the second precursor with the germanium compound.


Find Patent Forward Citations

Lehn, Jean-Sebastien. (2026). Methods for depositing germanium films by atomic layer deposition (U.S. Patent No. 12760416). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12760416

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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