Company Filing History:

8 out of 10,938

Skhynix Inc.

patents

2 out of 6,228

Hynix Semiconductor Inc.

patents

Years Active: 2012-2022

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10 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11276761 - Semiconductor device having buried gate structure, method for manufacturing the same, and memory cell having the same (2022-03-15),

2. 10553692 - Semiconductor device having buried gate structure, method for manufacturing the same, and memory cell having the same (2020-02-04),

3. 10395973 - Isolation structure and method for manufacturing the same (2019-08-27),

4. 10256136 - Method of manufacturing isolation structure for semiconductor device (2019-04-09),

5. 9865496 - Method for manufacturing isolation structure (2018-01-09),

6. 9786598 - Semiconductor device with air gaps and method for fabricating the same (2017-10-10),

7. 9634109 - Semiconductor device having dual work function gate structure, method for fabricating the same, transistor circuit having the same, memory cell having the same, and electronic device having the same (2017-04-25),

8. 9508847 - Semiconductor device having dual work function gate structure, method for fabricating the same, transistor circuit having the same, memory cell having the same, and electronic device having the same (2016-11-29),

9. 8343879 - Method for forming isolation layer of semiconductor device (2013-01-01),

10. 8222110 - Method for fabricating semiconductor device with vertical transistor having a second active pillar formed over a first active pillar (2012-07-17),

Title: The Innovations of Eun-Jeong Kim: Pioneering Semiconductor Technology

Introduction: Eun-Jeong Kim is a remarkable inventor based in Gyeonggi-do, South Korea, known for her significant contributions to the field of semiconductor technology. With an impressive portfolio of 10 patents, she is making waves in the tech industry through her innovative ideas and practical applications.

Latest Patents: Among her latest inventions, Eun-Jeong Kim has developed a semiconductor device featuring a buried gate structure, alongside a method for its manufacturing. This patent outlines a semiconductor device that consists of at least one trench extending into a semiconductor substrate, lined with a gate dielectric layer. It also includes a dipole inducing layer over the base of the trench, a gate electrode situated atop this layer, and doping regions within the semiconductor substrate that are strategically positioned apart by the trench and the dipole inducing layer. This innovative approach marks a significant advancement in semiconductor design and function.

Career Highlights: Eun-Jeong Kim has enjoyed a distinguished career at notable companies, including SK Hynix Inc. and Hynix Semiconductor Inc. Her work in these organizations has allowed her to refine her expertise in semiconductor technology, contributing to a number of groundbreaking developments in the field.

Collaborations: Throughout her career, Eun-Jeong has collaborated with esteemed colleagues, including Jin-Yul Lee and Dong-Soo Kim. These collaborations have fostered a creative environment, enabling the exchange of ideas and driving innovation in their projects.

Conclusion: Eun-Jeong Kim’s innovative spirit and technical skills in semiconductor technology showcase her as a leading inventor in her field. With numerous patents and impactful collaborations under her belt, she continues to shape the future of semiconductor devices, inspiring both peers and upcoming inventors. Her work not only enhances technology but also contributes to the advancement of industries reliant on cutting-edge semiconductor applications.

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Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.