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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11276761 B1

PDFFull Text
Date of Patent:
Mar. 15, 2022

Filed:

Jan. 06, 2020

Semiconductor device having buried gate structure, method for manufacturing the same, and memory cell having the same

Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Dong-Soo Kim, Gyeonggi-do, KR;

Sung-Won Lim, Gyeonggi-do, KR;

Eun-Jeong Kim, Gyeonggi-do, KR;

Hyun-Jin Chang, Gyeonggi-do, KR;

Keun Heo, Gyeonggi-do, KR;

Jee-Hyun Kim, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:

IP & T Group LLP

Primary Examiner:

Meiya Li

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 27/108 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 27/10823 (2013.01); H01L 27/10876 (2013.01); H01L 29/105 (2013.01); H01L 29/4966 (2013.01); H01L 29/511 (2013.01); H01L 29/517 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device includes at least one trench extending into a semiconductor substrate and lined with a gate dielectric layer; a dipole inducing layer covering a lowermost portion of the lined trench; a gate electrode covering the dipole inducing layer and filled in the lined trench; and doping regions, in the semiconductor substrate, separated from each other by the lined trench and separated from the dipole inducing layer.

Find Patent Forward Citations

Kim, Dong-Soo. (2022). Semiconductor device having buried gate structure, method for manufacturing the same, and memory cell having the same (U.S. Patent No. 11276761). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11276761

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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