Gyeonggi-do, South Korea

Jee-Hyun Kim



Average Co-Inventor Count = 5.2

ph-index = 4

Forward Citations = 77(Granted Patents)


Location History:

  • Seongnam-si, KR (2009 - 2011)
  • Gyeonggi-do, KR (2014 - 2022)

Company Filing History:


Years Active: 2009-2022

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8 patents (USPTO):Explore Patents

Title: The Innovations of Jee-Hyun Kim

Introduction

Jee-Hyun Kim is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of eight patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Among his latest patents is a semiconductor device featuring a buried gate structure, along with a method for manufacturing the same. This innovative semiconductor device includes at least one trench extending into a semiconductor substrate, lined with a gate dielectric layer. It also incorporates a dipole inducing layer that covers the lowermost portion of the lined trench, a gate electrode that covers the dipole inducing layer and fills the lined trench, and doping regions in the semiconductor substrate that are separated from each other by the lined trench and from the dipole inducing layer.

Career Highlights

Jee-Hyun Kim has worked with leading companies in the technology sector, including Samsung Electronics Co., Ltd. and SK Hynix Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Some of his notable coworkers include Hoon Huh and Jae-Ho Jeon. Their collaboration has contributed to the successful development of various semiconductor technologies.

Conclusion

Jee-Hyun Kim's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor devices and manufacturing methods.

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