Helsinki, Finland

Elina Färm

This inventor holds 20 USPTO granted patents and 10 published patent applications, primarily in Thin Film Deposition. Top assignees: Asm IP Holding B.v., Asm International N.v.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Elina Färm. Retrieved from https://idiyas.com/inventor/elina-färm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 85.0

Average Co-Inventor Count = 3.3

ph-index = 4

Forward Citations = 443(Granted Patents)


Company Filing History:


Years Active: 2015-2026

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Areas of Expertise:
Oxide Thin Films
Transition Metal Deposition
Thin Film Techniques
Selective Passivation
Self-Assembled Monolayers
Hydrophobic Precursors
Atomic Layer Deposition
Microcontact Printing
Deposition Processes
Surface Engineering
Gap Filling Methods
Metallic Surfaces
20 patents (USPTO):Explore Patents

Title: Inventor Elina Färm: Revolutionizing Technology in Helsinki

Introduction: Elina Färm is a pioneering inventor based in Helsinki, Finland, known for her groundbreaking contributions to the field of technology.

Latest Patents: Elina Färm holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing her innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Elina Färm has worked with leading research institutions and technology companies, consistently pushing the boundaries of what is possible in the tech industry.

Collaborations: Throughout her career, Elina Färm has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and creativity in all her projects.

Conclusion: Elina Färm's dedication to innovation and her relentless pursuit of technological advancement make her a true trailblazer in the field of inventions, inspiring future generations to think outside the box and create a better tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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