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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12170197 B1

PDFFull Text
Date of Patent:
Dec. 17, 2024

Filed:

Jul. 29, 2021

Selective passivation and selective deposition

Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Eva E. Tois, Espoo, FI;

Suvi P. Haukka, Helsinki, FI;

Raija H. Matero, Helsinki, FI;

Elina Färm, Helsinki, FI;

Delphine Longrie, Ghent, BE;

Hidemi Suemori, Helsinki, FI;

Jan Willem Maes, Wilrijk, BE;

Marko Tuominen, Espoo, FI;

Shaoren Deng, Ghent, BE;

Ivo Johannes Raaijmakers, Bilthoven, NL;

Andrea Illiberi, Leuven, BE;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:

Banner & Witcoff, Ltd.

Primary Examiner:

Mary A Wilczewski

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/32 (2006.01); H01L 21/321 (2006.01); H01L 21/56 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/02118 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/0272 (2013.01); H01L 21/3105 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32 (2013.01); H01L 21/321 (2013.01); H01L 21/56 (2013.01); H01L 21/67069 (2013.01); H01L 21/7682 (2013.01); H01L 21/76829 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 23/3171 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01);
Abstract

Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

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