The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2021

Filed:

Sep. 18, 2019
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Suvi P. Haukka, Helsinki, FI;

Raija H. Matero, Helsinki, FI;

Elina Färm, Helsinki, FI;

Tom E. Blomberg, Vantaa, FI;

Assignee:

ASM IP HOLDING B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45525 (2013.01); C23C 16/04 (2013.01); C23C 16/405 (2013.01);
Abstract

Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.


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