Moritzburg, Germany

Eberhard Kurth

USPTO Granted Patents = 8 

 

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 115(Granted Patents)


Location History:

  • Dresden, DE (1997)
  • Boxdorf, DE (2005)
  • Moritzburg, DE (2008 - 2019)

Company Filing History:


Years Active: 1997-2019

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8 patents (USPTO):Explore Patents

Title: Eberhard Kurth - Innovator in Ion-Sensitive Structures

Introduction

Eberhard Kurth is a distinguished inventor based in Moritzburg, Germany. He has made significant contributions to the field of ion-sensitive structures, holding a total of 8 patents. His innovative work has advanced the technology used in sensors and semiconductor structures.

Latest Patents

Among his latest patents is the "Ion-sensitive structure and method for producing the same." This invention features a semiconductor structure with a layer stack that includes a doped intermediate layer and a first metal oxide material. The design allows the semiconductor structure to alter its electric characteristics when in contact with an electrolyte containing ions. Another notable patent is the "Ion-sensitive layer structure for an ion-sensitive sensor and method for manufacturing the same." This method involves providing a semiconductor substrate with an oxide layer, followed by the deposition and tempering of a metal oxide layer and a metal layer to create a crystallized layer sequence.

Career Highlights

Eberhard Kurth has worked with prominent organizations, including the Fraunhofer Society for the Advancement of Applied Research and Micronic Laser Systems AB. His experience in these institutions has enriched his expertise in the development of advanced technologies.

Collaborations

Throughout his career, Kurth has collaborated with notable colleagues such as Christian Kunath and Torsten Pechstein. These partnerships have fostered innovation and contributed to the success of

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