The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Mar. 18, 2016
Applicant:
Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v., Munich, DE;
Inventors:
Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); G01N 27/12 (2006.01); G01N 27/333 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4148 (2013.01); G01N 27/129 (2013.01); G01N 27/333 (2013.01); G01N 27/414 (2013.01);
Abstract
An ion-sensitive structure includes a semiconductor structure and a layer stack disposed on the semiconductor structure having a doped intermediate layer including a doping material and a first metal oxide material. The semiconductor structure is configured to change an electric characteristic based on a contact of the ion-sensitive structure with an electrolyte including ions.
Kurth, Eberhard. (2019). Ion-sensitive structure and method for producing the same (U.S. Patent No. 10365244). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10365244
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile