The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
May. 10, 2005
Applicants:
Eberhard Kurth, Moritzburg, DE;
Christian Kunath, Dresden, DE;
Heinrich Grüger, Dresden, DE;
Inventors:
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract
An ion-sensitive field effect transistor has a gate consisting of metal silicate. The gate of metal silicate provides high resistance to aggressive measured substances and further has a high long-term stability. The gate of the ion-sensitive field effect transistor may include a single layer gate, wherein the gate is arranged directly on the channel region.