Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Endress+hauser Conducta Gmbh+co. Kg

Endress+hauser Conducta Gesellschaft Fur Mess- Und Regeltechnik Mbh+co. Kg

Micronic Laser Systems Ab

Eberhard Kurth

Christian Kunath

Torsten Pechstein

Torbjörn Sandström

Harald Schenk

Ulric Ljungblad

Mathias Krauss

Thomas Grebinski

Heinrich Grüger

Ulrike A Dauderstadt

Beate Hildebrandt

Stephan Sorge

An ion-sensitive structure includes a semiconductor structure and a layer stack disposed on the semiconductor structure having a doped intermediate layer including a doping material and a first metal oxide material. The semiconductor structure is configured to change an electric characteristic based on a contact of the ion-sensitive structure with an electrolyte including ions.

Ion-sensitive structure and method for producing the same

In a method for manufacturing an ion-sensitive structure for an ion-sensitive sensor, first a semiconductor substrate bearing an oxide layer is provided, whereupon a metal oxide layer and a metal layer are deposited and tempered, in order to obtain a layer sequence having a crystallized metal oxide layer and an oxidized and crystallized metal layer on the semiconductor substrate bearing the oxide layer. In such case, the metal oxide layer and the metal layer have a compatible metal element, and the coating thickness dof the metal oxide layer is greater than the coating thickness dof the metal layer.

Ion-sensitive layer structure for an ion-sensitive sensor and method for manufacturing the same

An ion-sensitive sensor with an EIS structure includes: a semiconductor substrate, on which a layer of a substrate oxideis produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable intermediate insulator, which is deposited on the adapting or matching layer; and a sensor layer, which comprises a tantalum oxide or a tantalum oxynitride, and which is applied on the intermediate insulator; wherein the intermediate insulator comprises hafnium oxide or zirconium oxide or a mixture of zirconium oxide and hafnium oxide, and wherein the adapting or matching layer differs in its chemical composition and/or in its structure from the intermediate insulator and from the substrate oxide.

Ion-sensitive sensor with multilayer construction in the sensitive region

A protective structure for a semiconductor sensor integrated in a semiconductor substrate for use in a state that is in direct contact with a measuring medium has a semiconducting layer that is applied to the semiconductor substrate, a metal layer and an insulating layer. The insulating layer is disposed between the semiconducting layer and the metal layer and electrically insulates same.

Protective structure for semiconductor sensors

An ion-sensitive field effect transistor has a gate consisting of metal silicate. The gate of metal silicate provides high resistance to aggressive measured substances and further has a high long-term stability. The gate of the ion-sensitive field effect transistor may include a single layer gate, wherein the gate is arranged directly on the channel region.

Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor

An ion-sensitive field effect transistor includes a substrate on which there are formed a source region and a drain region. Above a channel region, the ion-sensitive field effect transistor has a gate with a sensitive layer including a metal oxide nitride mixture and/or a metal oxide nitride mixture compound.

The present invention includes methods and devices that improve the radiation-resistance of a movable micromechanical optical element. In particular, a radiation-resistant layer is added to a movable micro-mechanical optical element, suitable to reduce the surface and bulk material changes to the element that result from exposure to pulsed laser energy densities less than 100 micro-joules per square centimeter and at wavelengths less than or equal to about 248 nm.

Growing community of inventors

Moritzburg, Germany

Eberhard Kurth