The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Aug. 20, 2014
Applicant:

Endress + Hauser Conducta Gesellschaft Für Mess- Und Regeltechnik Mbh + Co. KG, Gerlingen, DE;

Inventors:

Christian Kunath, Dresden, DE;

Eberhard Kurth, Moritzburg, DE;

Torsten Pechstein, Radebeul, DE;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
G01N 27/414 (2013.01); H01L 21/28088 (2013.01); H01L 21/28229 (2013.01);
Abstract

In a method for manufacturing an ion-sensitive structure for an ion-sensitive sensor, first a semiconductor substrate bearing an oxide layer is provided, whereupon a metal oxide layer and a metal layer are deposited and tempered, in order to obtain a layer sequence having a crystallized metal oxide layer and an oxidized and crystallized metal layer on the semiconductor substrate bearing the oxide layer. In such case, the metal oxide layer and the metal layer have a compatible metal element, and the coating thickness dof the metal oxide layer is greater than the coating thickness dof the metal layer.


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