IDiyas

For the Inventor, By the Inventor

Clifton Park, NY, United States of America

E Todd Ryan

USPTO Granted Patents = 12 

Average Co-Inventor Count = 2.3

ph-index = 5

Forward Citations = 119(Granted Patents)


Location History:

  • Wappingers Falls, NY (US) (2005 - 2013)
  • Clifton Park, NY (US) (2010 - 2015)

Company Filing History:

goldMedal6 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
silverMedal6 out of 164,108 
 
International Business Machines Corporation
 patents
bronzeMedal6 out of 5,671 
 
Globalfoundries Inc.
 patents
4. 1 out of 13,684 
 
Applied Materials, Inc.
 patents
where one patent can have more than one assignee

Years Active: 2005-2015

where 'Filed Patents' based on already Granted Patents

12 patents (USPTO):
1. 9040411 - Advanced low k cap film formation process for nano electronic devices (2015-05-26),
2. 8664109 - Advanced low k cap film formation process for nano electronic devices (2014-03-04),
3. 8592312 - Method for depositing a conductive capping layer on metal lines (2013-11-26),
4. 8481423 - Methods to mitigate plasma damage in organosilicate dielectrics (2013-07-09),
5. 8470706 - Methods to mitigate plasma damage in organosilicate dielectrics (2013-06-25),
6. 8324093 - Methods for fabricating semiconductor devices including azeotropic drying processes (2012-12-04),
7. 8212346 - Method and apparatus for reducing semiconductor package tensile stress (2012-07-03),
8. 8212337 - Advanced low k cap film formation process for nano electronic devices (2012-07-03),
9. 7998856 - Interconnects with a dielectric sealant layer (2011-08-16),
10. 7737052 - Advanced multilayer dielectric cap with improved mechanical and electrical properties (2010-06-15),
11. 7557035 - Method of forming semiconductor devices by microwave curing of low-k dielectric films (2009-07-07),
12. 6919636 - Interconnects with a dielectric sealant layer (2005-07-19),

Title: The Innovative Journey of E Todd Ryan

Introduction

E Todd Ryan, an accomplished inventor based in Clifton Park, NY, has made significant contributions to the field of nanoelectronics. With a total of 12 patents to his name, his work reflects a profound understanding of materials and processes critical for advanced electronic devices.

Latest Patents

Among his latest innovations is the "Advanced low k cap film formation process for nano electronic devices." This patent presents a method for creating a carbon-rich silicon carbide-like dielectric film, achieving a carbon concentration of at least 30 atomic % C. Notably, this dielectric film boasts a dielectric constant of 4.5 or lower. An optional addition of nitrogen is also explored, constrained to a concentration of no more than 5 atomic % when present. This work is pivotal for enhancing the performance and efficiency of nanoelectronic components.

Career Highlights

E Todd Ryan has had the opportunity to work with leading technology companies, notably Advanced Micro Devices Corporation and International Business Machines Corporation (IBM). His career showcases a commitment to pushing the boundaries of what is possible in electronic material science.

Collaborations

Throughout his career, Ryan has collaborated with several notable colleagues, including Alfred Grill and Joshua L. Herman. These collaborations have undoubtedly fostered a creative environment conducive to innovative breakthroughs in the field of nanoelectronics.

Conclusion

E Todd Ryan's journey as an inventor exemplifies the spirit of innovation. His patents not only contribute to advancements in technology but also pave the way for future discoveries in the realm of nanoelectronics. As industries evolve, Ryan's contributions remain a testament to the impact of well-crafted inventions in shaping the technological landscape.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…