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For the Inventor, By the Inventor

Palo Alto, CA, United States of America

Dragan Valentin Podlesnik

This inventor holds 28 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Processing. Top assignees: Applied Materials, Inc., Lam Research Corporation, International Business Machines Corporation. Active years: 1998-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dragan Valentin Podlesnik. Retrieved from https://idiyas.com/inventor/dragan-valentin-podlesnik

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 28 

% Patents Active = 64.3

Average Co-Inventor Count = 4.6

ph-index = 10

Forward Citations = 769(Granted Patents)


Company Filing History:

goldMedal18 out of 14,502 
 
Applied Materials, Inc.
 patents
silverMedal5 out of 3,955 
 
Lam Research Corporation
 patents
bronzeMedal1 out of 166,425 
 
International Business Machines Corporation
 patents
4. 1 out of 1 
 
Lam Research Group
 patent
5. 1 out of 30,893 
 
Siemens Aktiengesellschaft
 patents
6. 3 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 1998-2015

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Areas of Expertise:
Particle Contaminant Removal
Surface Treatment
Semiconductor Substrates
Etching Techniques
Plasma Etching
High Etch Rates
Micromachining
Process Sensitivity
Deep Trenches
Silicon Trench Etch
Chemical Applications
28 patents (USPTO):Explore Patents
1. 8983631 - Arrangement for identifying uncontrolled events at the process module level and methods thereof (2015-03-17),
2. 8828145 - Method of particle contaminant removal (2014-09-09),
3. 8652266 - Method and apparatus for surface treatment of semiconductor substrates using sequential chemical applications (2014-02-18),
4. 8226775 - Methods for particle removal by single-phase and two-phase media (2012-07-24),
5. 8211846 - Materials for particle removal by single-phase and two-phase media (2012-07-03),
6. 8084406 - Apparatus for particle removal by single-phase and two-phase media (2011-12-27),
7. 6897155 - Method for etching high-aspect-ratio features (2005-05-24),
8. 6827869 - Method of micromachining a multi-part cavity (2004-12-07),
9. 6808647 - Methodologies to reduce process sensitivity to the chamber condition (2004-10-26),
10. 6802933 - Apparatus for performing self cleaning method of forming deep trenches in silicon substrates (2004-10-12),
11. 6696365 - Process for in-situ etching a hardmask stack (2004-02-24),
12. 6653237 - High resist-selectivity etch for silicon trench etch applications (2003-11-25),
13. 6642127 - Method for dicing a semiconductor wafer (2003-11-04),
14. 6593244 - Process for etching conductors at high etch rates (2003-07-15),
15. 6583063 - Plasma etching of silicon using fluorinated gas mixtures (2003-06-24),

Title: Dragan Valentin Podlesnik - Innovator from Palo Alto

Introduction: Dragan Valentin Podlesnik is a renowned inventor based in Palo Alto, CA, known for his groundbreaking contributions to various technological fields.

Latest Patents: Dragan Valentin Podlesnik holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovation.

Career Highlights: With a background in engineering and a passion for problem-solving, Dragan Valentin Podlesnik has successfully developed cutting-edge solutions that have revolutionized industries and improved people's lives.

Collaborations: Throughout his career, Dragan Valentin Podlesnik has collaborated with leading research institutions, universities, and tech companies to bring his inventions to the market, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Dragan Valentin Podlesnik's innovative spirit and dedication to pushing the boundaries of technology make him a standout figure in the world of inventors, with a legacy that continues to inspire future generations of innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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