The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
Aug. 14, 2002
Ajay Kumar, Sunnyvale, CA (US);
Anisul H. Khan, Santa Clara, CA (US);
Dragan Podlesnik, Palo Alto, CA (US);
Sharma V. Pamarthy, Hayward, CA (US);
Axel Henke, Dresden, DE;
Stephan Wege, Dresden, DE;
Virinder Grewal, Santa Clara, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Anisul H. Khan, Santa Clara, CA (US);
Dragan Podlesnik, Palo Alto, CA (US);
Sharma V. Pamarthy, Hayward, CA (US);
Axel Henke, Dresden, DE;
Stephan Wege, Dresden, DE;
Virinder Grewal, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for operating a plasma reactor to etch high-aspect-ratio features on a workpiece in a vacuum chamber. The method comprises the performance of an etch process followed by a flash process. During the etch process, a first gas is supplied into the vacuum chamber, and a plasma of the first gas is maintained for a first period of time. The plasma of the first gas comprises etchant and passivant species. During the flash process, a second gas comprising a deposit removal gas is supplied into the vacuum chamber, and a plasma of the second gas is maintained for a second period of time. The DC voltage between the workpiece and the plasma of the second gas during the second period of time is significantly less than the DC voltage between the workpiece and the plasma of the first gas during the first period of time.