The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
Mar. 05, 1999
Applicant:
Inventors:
Anisul Khan, Sunnyvale, CA (US);
Dragan Podlesnik, Palo Alto, CA (US);
Nam-Hun Kim, Cupertino, CA (US);
Gene Lee, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method of etching silicon using a plasma generated from a gas comprising fluorine (F), oxygen (O), hydrogen (H) and carbon (C).
Khan, Anisul. (2003). Plasma etching of silicon using fluorinated gas mixtures (U.S. Patent No. 6583063). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6583063
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile