San Jose, CA, United States of America

Gene S Lee

This inventor holds 20 USPTO granted patents and 8 published patent applications and 1 EPO patent, primarily in Metal Etching Techniques. Top assignees: Applied Materials, Inc., Commissariat a L'energie Atomique Et Aux Energies Alternatives, Other. Active years: 2001-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gene S Lee. Retrieved from https://idiyas.com/inventor/gene-s-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 95.0


Average Co-Inventor Count = 3.6

ph-index = 4

Forward Citations = 347(Granted Patents)


Location History:

  • Las Vegas, NV (US) (2023)
  • San Jose, CA (US) (2001 - 2024)

Company Filing History:


Years Active: 2001-2025

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Areas of Expertise:
Recessed Etching
Barrier Metal Etching
Spacer Patterning
Anisotropic Etch
Hardmask Layer
Dielectric Materials
3D NAND
Plasma Etching
Silicon Substrate
High Temperature Etching
Selective Etching
Patterning Techniques
20 patents (USPTO):Explore Patents

Title: Gene S Lee: Innovator in Metal Etching Technologies

Introduction

Gene S Lee, based in San Jose, CA, is a notable inventor with a significant portfolio of 19 patents. His contributions to the field of semiconductor manufacturing, particularly in metal etching techniques, have advanced the industry and improved production processes.

Latest Patents

Among his most recent patents is a method for selective barrier metal etching. This innovative approach involves performing a hydrogen implantation process in an inductively coupled plasma (ICP) etch chamber to chemically reduce oxidized portions of a barrier metal layer. Following this, an etch process is carried out in the same chamber to remove the hydrogen-implanted portions of the barrier metal layer. Another notable patent is the spacer patterning process with a flat top profile, which details a method for forming metal-containing features. This method includes conformally depositing an over layer on top surfaces of a patterned mandrel layer and an over spacer layer on the sidewalls, followed by an etch process to remove specific portions using a fluorine-containing etching gas.

Career Highlights

Gene S Lee has made significant strides in his career, having worked with leading companies such as Applied Materials, Inc. and the Commissariat à l'Énergie Atomique et aux Énergies Alternatives. His expertise in etching technologies has earned him respect in the industry and recognition as a key contributor to several successful projects.

Collaborations

Throughout his career, Gene has collaborated with talented individuals, including Akhil Mehrotra and Shan Jiang. These partnerships have contributed to the successful development of innovative technologies and have facilitated the advancement of system capabilities in the semiconductor field.

Conclusion

Gene S Lee stands out as an influential inventor in metal etching technology. His patents and collaborations demonstrate a commitment to innovation that continues to shape the semiconductor manufacturing landscape. Gene's work exemplifies the crucial role of inventive minds in driving forward technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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