The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
May. 18, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Nancy Fung, Livermore, CA (US);
Gene Lee, San Jose, CA (US);
Hailong Zhou, San Jose, CA (US);
Zohreh Hesabi, San Jose, CA (US);
Akhil Mehrotra, Sunnyvale, CA (US);
Shan Jiang, San Jose, CA (US);
Abhijit Patil, San Jose, CA (US);
Chi-I Lang, Cupertino, CA (US);
Larry Gao, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of etching a hardmask layer formed on a substrate is provided. The method includes supplying an etching gas mixture to a processing region of a processing chamber. A device is disposed in the processing region when the etching gas mixture is supplied to the processing region. The device comprises a substrate and a hardmask layer formed over the substrate. The etching gas mixture comprises a fluorine-containing gas, a silicon-containing gas, and an oxygen-containing gas. The method further includes providing RF power to the etching gas mixture to form a plasma in the processing region. The plasma is configured to etch exposed portions of the hardmask layer.