The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
May. 05, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Tzu-shun Yang, Milpitas, CA (US);
Rui Cheng, Santa Clara, CA (US);
Karthik Janakiraman, San Jose, CA (US);
Zubin Huang, Santa Clara, CA (US);
Diwakar Kedlaya, Santa Clara, CA (US);
Meenakshi Gupta, San Jose, CA (US);
Srinivas Guggilla, San Jose, CA (US);
Yung-chen Lin, Gardena, CA (US);
Hidetaka Oshio, Tokyo, JP;
Chao Li, Santa Clara, CA (US);
Gene Lee, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.