The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jul. 22, 2016
Applied Materials, Inc., Santa Clara, CA (US);
Hailong Zhou, San Jose, CA (US);
Gene Lee, San Jose, CA (US);
Abhijit Patil, San Jose, CA (US);
Shan Jiang, San Jose, CA (US);
Akhil Mehrotra, Sunnyvale, CA (US);
Jonathan Kim, Danville, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for etching a bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) to form high aspect ratio features using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features with high aspect ratios through a proper sidewall and bottom management scheme during the bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) open process. In one embodiment, a method for etching a dielectric anti-reflective coating (DARC) layer to form features in the DARC layer includes supplying an etching gas mixture onto a DARC layer disposed on a substrate, wherein the substrate is disposed on a substrate support pedestal assembly disposed in a processing chamber, controlling a temperature of the substrate support pedestal assembly greater than 110 degrees Celsius, and etching the DARC layer disposed on the substrate.