Recessed metal etching methods

Abstract

Embodiments described herein generally relate to electronic devices and electronic device manufacturing. More particularly, some embodiments of the present disclosure provide methods of manufacturing memory devices, for example, dynamic random-access memory cells with buried word-lines. In an embodiment, a method of manufacturing an electronic device is provided. The method includes recessing a metal layer to a first predetermined depth to form a recessed metal layer. The metal layer at least partially fills each feature of a plurality of features formed on a substrate and each feature has a feature depth. The method further includes exposing the recessed metal layer to a carbon-containing plasma to form a metal-carbide layer on the recessed metal layer. The method further includes recessing the recessed metal layer to a second predetermined depth by etching the metal-carbide layer and the recessed metal layer.