The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Mar. 17, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Tzu-shun Yang, Milpitas, CA (US);
Rui Cheng, Santa Clara, CA (US);
Karthik Janakiraman, San Jose, CA (US);
Zubin Huang, Santa Clara, CA (US);
Diwakar Kedlaya, Santa Clara, CA (US);
Meenakshi Gupta, San Jose, CA (US);
Srinivas Guggilla, San Jose, CA (US);
Yung-chen Lin, Gardena, CA (US);
Hidetaka Oshio, Tokyo, JP;
Chao Li, Santa Clara, CA (US);
Gene Lee, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a mandrel layer on a substrate, conformally forming a spacer layer on the mandrel layer, wherein the spacer layer is a doped silicon material, and patterning the spacer layer. In another embodiment, a method for forming features on a substrate includes conformally forming a spacer layer on a mandrel layer on a substrate, wherein the spacer layer is a doped silicon material, selectively removing a portion of the spacer layer using a first gas mixture, and selectively removing the mandrel layer using a second gas mixture different from the first gas mixture.