The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Jun. 27, 2001
Shashank Deshmukh, San Jose, CA (US);
David Mui, San Jose, CA (US);
Jeffrey D. Chinn, Foster City, CA (US);
Dragan V Podlesnik, Palo Alto, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Processes for forming trenches within silicon substrates are described. According to an embodiment of the invention, a masked substrate is initially provided that comprises (a) a silicon substrate and (b) a patterned resist layer over the silicon substrate. The patterned resist layer has one or more apertures formed therein. Subsequently, a trench is formed in the substrate through the apertures in the resist layer by an inductive plasma-etching step, which is conducted using plasma source gases that comprise SF , at least one fluorocarbon gas, and N . If desired, Cl can also be provided in addition to the above source gases. The process of the present invention produces chamber deposits in low amounts, while providing high etching rates, high silicon:resist selectivities, and good trench sidewall profile control.