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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Doo-Gon Kim

USPTO Granted Patents = 16

Average Co-Inventor Count = 2.6

ph-index = 7

Forward Citations = 460(Granted Patents)


Location History:

  • Suwon-si, KR (2009 - 2010)
  • Gyeonggi-do, KR (2010 - 2012)
  • Hwaseong-si, KW (2012)
  • Hwaseong-si, KR (2010 - 2018)

Company Filing History:

goldMedal16 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2009-2018

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16 patents (USPTO):Explore Patents
1. 9903901 - Leakage current detection device and nonvolatile memory device having the same (2018-02-27),
2. 8767450 - Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same (2014-07-01),
3. 8315105 - Method of erasing in non-volatile memory device (2012-11-20),
4. 8208335 - Semiconductor memory device and system including the same (2012-06-26),
5. 8031544 - Semiconductor memory device with three-dimensional array and repair method thereof (2011-10-04),
6. 7957199 - Method of erasing in non-volatile memory device (2011-06-07),
7. 7940578 - Flash memory device having row decoders sharing single high voltage level shifter, system including the same, and associated methods (2011-05-10),
8. 7911835 - Programming and reading five bits of data in two non-volatile memory cells (2011-03-22),
9. 7843733 - Flash memory devices having three dimensional stack structures and methods of driving same (2010-11-30),
10. 7778085 - Method of erasing in non-volatile memory device (2010-08-17),
11. 7773427 - Non-volatile memory device and method of operating (2010-08-10),
12. 7672166 - Method of programming in a non-volatile memory device and non-volatile memory device for performing the same (2010-03-02),
13. 7649775 - Flash memory device applying erase voltage (2010-01-19),
14. 7633785 - Semiconductor memory device and method of generating chip enable signal thereof (2009-12-15),
15. 7609571 - Semiconductor memory device having a control unit receiving a sensing block selection address signal and related method (2009-10-27),

Title: Innovations of Doo-Gon Kim

Introduction

Doo-Gon Kim is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of electronics, particularly in memory devices and leakage current detection technologies. With a total of 16 patents to his name, Kim continues to push the boundaries of innovation.

Latest Patents

Among his latest patents is a leakage current detection device, which includes a test detection circuit, a reference detection circuit, a comparator, and a latch circuit. This device is designed to accurately detect leakage currents, enhancing the reliability of electronic systems. Another notable patent is related to memory controllers that refresh memory sectors in response to writing signals. This memory system comprises a memory cell array with multiple sectors, each containing numerous memory cells, and is optimized for efficient data writing and refreshing.

Career Highlights

Doo-Gon Kim is currently employed at Samsung Electronics Co., Ltd., where he has been instrumental in developing cutting-edge technologies. His work has not only advanced the company's product offerings but has also contributed to the broader field of electronics.

Collaborations

Throughout his career, Kim has collaborated with talented individuals such as Ki-Tae Park and Yeong-taek Lee, who have also made significant contributions to their respective fields.

Conclusion

Doo-Gon Kim's innovative spirit and dedication to advancing technology have established him as a key figure in the electronics industry. His patents reflect a commitment to improving electronic devices and systems, ensuring a lasting impact on the field.

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