The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Sep. 21, 2007
Doo-gon Kim, Gyeonggi-do, KR;
Ki-tae Park, Gyeonggi-do, KR;
Yeong-taek Lee, Seoul, KR;
Abstract
Non-volatile memory devices and methods of programming the non-volatile memory devices use six threshold voltage levels. Data also may be read from the non-volatile memory devices. The non-volatile memory devices include a first non-volatile memory cell and a second non-volatile memory cell, each of which can be programmed with first through sixth threshold voltage levels that sequentially increase. Programming includes first, second and third data bit program operations. In the first and second data bit program operation, the first and second non-volatile memory cells are programmed with the first or second threshold voltage level in order to store first and second bits of data. In the third data bit program operation, the first non-volatile memory cell is programmed with the third or fourth threshold voltage level according to the first and second bits of the data in order to store a third bit of the data. Fourth and fifth data bit program operations also may be provided.