The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
May. 13, 2010
Doo-gon Kim, Hwaseong-si, KR;
Hui-kwon Seo, Hwaseong-si, KR;
Cheol-kyu Kim, Seocho-gu, KR;
Sei-jin Kim, Seongnam-si, KR;
Yoon-ho Khang, Yongin-si, KR;
Han-gu Sohn, Suwon-si, KR;
Tae-yon Lee, Seongbuk-gu, KR;
Dae-won Ha, Gangnam-gu, KR;
Doo-gon Kim, Hwaseong-si, KR;
Hui-kwon Seo, Hwaseong-si, KR;
Cheol-kyu Kim, Seocho-gu, KR;
Sei-jin Kim, Seongnam-si, KR;
Yoon-ho Khang, Yongin-si, KR;
Han-gu Sohn, Suwon-si, KR;
Tae-yon Lee, Seongbuk-gu, KR;
Dae-won Ha, Gangnam-gu, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A memory system includes a memory cell array having a plurality of memory sectors. Each memory sector includes a plurality of memory cells. The memory system further includes a controller configured to write data to the memory cell array in response to a writing signal. The controller is further configured to refresh a memory sector among the plurality of memory sectors each time a writing signal is provided. When N (N is a positive integer) memory cells are programmed, a programming current is less than or equal to about 0.75 mA*N.