The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2011

Filed:

Jan. 14, 2009
Applicants:

Myoung-gon Kang, Suwon-si, KR;

Yeong-taek Lee, Seoul, KR;

Ki-tae Park, Seongnam-si, KR;

Doo-gon Kim, Hwaseong-si, KR;

Inventors:

Myoung-gon Kang, Suwon-si, KR;

Yeong-taek Lee, Seoul, KR;

Ki-tae Park, Seongnam-si, KR;

Doo-gon Kim, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A flash memory device includes first and second memory cell array blocks and a row decoder coupled to the first memory cell array block and the second memory cell array block. The row decoder includes a block decoder, a single high voltage level shifter that is coupled to both the first and second memory cell array blocks, the single high voltage level shifter configured to provide a block wordline signal of a high voltage to the first and second memory array blocks in response to a block selection signal received from the block decoder, a first pass transistor unit, and a second pass transistor unit.


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