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For the Inventor, By the Inventor

San Jose, CA, United States of America

Dongna Shen

USPTO Granted Patents = 62 

Average Co-Inventor Count = 3.6

ph-index = 6

Forward Citations = 179(Granted Patents)

Forward Citations (Not Self Cited) = 137(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal45 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal17 out of 1,214 
 
Headway Technologies, Incorporated
 patents

Years Active: 2017-2025

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Areas of Expertise:
MRAM Devices
Magnetic Tunnel Junctions
Ion Beam Etching
Etch Resistive Photoresist
Silicon Oxynitride Encapsulation
Spin-Orbit-Torque Switching
Physical Etching
Chemical Etching
Low Resistance MgO Capping
Self-Aligned Hard Mask
Sub 30nm Vias
Conductive Material Re-Deposition
62 patents (USPTO):Explore Patents
1. 12414479 - Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode (2025-09-09),
2. 12310245 - Etching and encapsulation scheme for magnetic tunnel junction fabrication (2025-05-20),
3. 12245516 - Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-deposition (2025-03-04),
4. 12207567 - Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process (2025-01-21),
5. 12185641 - Silicon oxynitride based encapsulation layer for magnetic tunnel junctions (2024-12-31),
6. 11985905 - Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devices (2024-05-14),
7. 11930715 - Highly physical etch resistive photoresist mask to define large height sub 30nm via and metal hard mask for MRAM devices (2024-03-12),
8. 11903324 - Post treatment to reduce shunting devices for physical etching process (2024-02-13),
9. 11895928 - Integration scheme for three terminal spin-orbit-torque (SOT) switching devices (2024-02-06),
10. 11856864 - Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode (2023-12-26),
11. 11818961 - Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-deposition (2023-11-14),
12. 11800811 - MTJ CD variation by HM trimming (2023-10-24),
13. 11785863 - Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process (2023-10-10),
14. 11696511 - Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions (2023-07-04),
15. 11631802 - Etching and encapsulation scheme for magnetic tunnel junction fabrication (2023-04-18),

Title: Innovations by Dongna Shen: Pioneering Magnetic Tunnel Junction Technologies

Introduction

Dongna Shen is an accomplished inventor based in San Jose, CA, renowned for his contributions to the field of magnetic tunnel junction (MTJ) technology. With an impressive portfolio of 59 patents, Shen has made significant strides in developing methods that enhance the performance of MRAM (Magnetoresistive Random Access Memory) devices.

Latest Patents

Among Shen's latest patents are two notable innovations. The first patent describes a method for fabricating a magnetic tunneling junction structure using an under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process. This innovative approach improves the formation of via openings with precision sidewalls, ensuring effective deposition of metal layers to complete the MTJ structure.

The second patent entails a silicon oxynitride based encapsulation layer for magnetic tunnel junctions created through a plasma enhanced chemical vapor deposition (PECVD) method. This method significantly minimizes damage to the MTJ sidewall during the encapsulation process, resulting in a higher magnetoresistive ratio compared to conventional methods, particularly after a 400° C. anneal. The unique flow rate ratios during the deposition process allow for enhanced performance and reliability of MTJ devices.

Career Highlights

Dongna Shen has garnered extensive experience in the semiconductor industry, being associated with reputable organizations such as Taiwan Semiconductor Manufacturing Company and Headway Technologies, Incorporated. His work in these companies has enabled him to delve deeper into the intricacies of semiconductor device fabrication and innovative material applications.

Collaborations

Throughout his career, Shen has collaborated with other talented professionals, including Yu-Jen Wang and Yi Yang. These partnerships have facilitated the exchange of ideas and have played a critical role in driving forward his research and patent developments in MTJ technologies.

Conclusion

Dongna Shen's inventive contributions, particularly in the realm of magnetic tunnel junction fabrication and encapsulation, reflect his dedication to advancing memory technologies. With 59 patents to his name, his work continues to shape the future of MRAM devices, promising greater efficiency and performance in data storage solutions.

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