The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Oct. 03, 2019
Headway Technologies, Inc., Milpitas, CA (US);
Jesmin Haq, Milpitas, CA (US);
Tom Zhong, Saratoga, CA (US);
Luc Thomas, San Jose, CA (US);
Zhongjian Teng, Santa Clara, CA (US);
Dongna Shen, San Jose, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A three terminal spin-orbit-torque (SOT) device is disclosed wherein a free layer (FL) with a switchable magnetization is formed on a Spin Hall Effect (SHE) layer comprising a Spin Hall Angle (SHA) material. The SHE layer has a first side contacting a first bottom electrode (BE) and an opposite side contacting a second BE where the first and second BE are separated by a dielectric spacer. A first current is applied between the two BE, and the SHE layer generates SOT on the FL thereby switching the FL magnetization to an opposite perpendicular-to-plane direction. The SHE layer is a positive or negative SHA material, and may be a topological insulator such as BiSb. A top electrode is formed on an uppermost hard mask in each SOT device. A single etch through the FL and SHE layer ensures a reliable first current pathway that is separate from a read current pathway.